This paper presents a practical condition monitoring method for detecting bond wire degradation in TO247 packaged SiC MOSFET devices using ON-state resistance (R_dsON) compensated for junction temperature variations. While R_dsON is a promising health indicator, its strong dependence on junction temperature (T_j) limits its direct applicability in realworld systems. To overcome this, a novel approach is proposed that uses the temperature measured at the drain leg (T_Midleg) as a proxy for T_j, enabling temperature-compensated R_dsON measurements during power cycling tests (PCT). The method is experimentally validated on two SCT30N120 SiC MOSFET devices under active power cycling test conditions. The results demonstrate a clear correlation between the increase in R_dsON measured at the defined T_MidLeg and bond wire degradation, with similar trends observed when R_dsON is evaluated at the minimum junction temperature (T_j,min) estimated using the TSEP method. Failure analysis confirms bond wire cracking without significant solder layer delamination, demonstrating the effectiveness of the proposed method for bond wire-related failure detection.