This paper describes issues related to design,construction and experimental verification of a 6 kW, 200 kHzboost converter (300 V/600 V) built with four parallel-connectedSiC bipolar transistors. The main focus is on parallel-connectionof the SiC BJTs: crucial device parameters and influence of theparasitics are discussed. A special solution for the base-driveunit, based on the dual-source driver concept, is also presentedin this paper. Experimental verification of the boost converterwith special attention to power loss measurement and thermalperformance of the parallel-connected transistors is also shown.The peak efficiency measured at nominal conditions wasapproximately 98.5% where the base-drive unit causes around 10% of the total losses.