The paper presents an inductor with reduced self-capacitance, designed and evaluated with fast-switching SiC transistors in dc-dc converters. A conventional inductor with the same core and number of turns was also build for comparison. The two inductors are tested experimentally on two different 2 kW, 100 kHz dc-dc converters with silicon carbide switches-one with a junction field-effect transistor (JFET) and the other with a bipolar junction transistor (BJT). Replacing the conventional inductor with the one that has lower self-capacitance improved the switching performance of the converter and reduced its electromagnetic emissions. Furthermore, the efficiency of the converter is improved-in the case of the JFET boost converter the power losses were reduced by 16% and by 20% in the case of BJT.