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Influence of MgO barrier quality on spin-transfer torque in magnetic tunnel junctions
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik. University of Gothenburg, Sweden.ORCID-id: 0000-0002-3513-6608
Vise andre og tillknytning
2018 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, nr 2, artikkel-id 022406Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.

sted, utgiver, år, opplag, sider
American Institute of Physics (AIP), 2018. Vol. 112, nr 2, artikkel-id 022406
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Identifikatorer
URN: urn:nbn:se:kth:diva-221787DOI: 10.1063/1.5005893ISI: 000422965000031Scopus ID: 2-s2.0-85040519728OAI: oai:DiVA.org:kth-221787DiVA, id: diva2:1177400
Forskningsfinansiär
Swedish Foundation for Strategic Research Swedish Research Council
Merknad

QC 20180125

Tilgjengelig fra: 2018-01-25 Laget: 2018-01-25 Sist oppdatert: 2022-06-26bibliografisk kontrollert

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Åkerman, Johan

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