Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching ApplicationsVise andre og tillknytning
2019 (engelsk)Inngår i: 2019 Compound Semiconductor Week, CSW 2019: Proceedings, Institute of Electrical and Electronics Engineers (IEEE) , 2019Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]
Heteroepitaxial growth of orientation-patterned GaP on patterned GaAs template was developed by using hydride vapor phase epitaxy for quasi-phase-matching applications. We present the growth with well-defined periodic boundaries between (001) and (00 1) GaP domains. The GaP layer on planar GaAs was characterized by terahertz time-domain spectroscopy and the conductivity of GaP (0.16 S cm-1) was obtained in terahertz range.
sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE) , 2019.
Emneord [en]
Hydride vapour phase epitaxy, Orientation patterned GaP on GaAs, Terahertz time-domain spectroscopy, Gallium arsenide, Gallium phosphide, Hydrides, Phase matching, Plasmons, Reflectometers, Semiconducting gallium, Spectrophotometers, Terahertz spectroscopy, Vapor phase epitaxy, GaAs, Hydride vapor phase epitaxy, Hydride vapour phase epitaxies, Periodic boundaries, Quasi phase matching, Terahertz range, Terahertz time domain spectroscopy, III-V semiconductors
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-301516DOI: 10.1109/ICIPRM.2019.8819110ISI: 000539485600120Scopus ID: 2-s2.0-85072976556OAI: oai:DiVA.org:kth-301516DiVA, id: diva2:1594272
Konferanse
2019 Compound Semiconductor Week, CSW 2019, 19-23 May 2019, Nara, Japan
Merknad
Not duplicate with DiVA 1366349
Part of proceedings: ISBN 978-1-7281-0080-7
QC 20230921
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