Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Enhanced Modulation Bandwidth of a Magnetic Tunnel Junction-Based Spin Torque Nano-Oscillator Under Strong Current Modulation
Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India.;Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119077, Singapore..
Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India.;Spintec, CNRS, CEA, F-38000 Grenoble, France..
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Material- och nanofysik. Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden..ORCID-id: 0000-0002-3513-6608
Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India..
2021 (engelsk)Inngår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 42, nr 12, s. 1886-1889Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The modulation bandwidth (f(BW)) is a critical figure-of-merit for wireless communication applications of spin torque nano-oscillators (STNOs) as it determines the maximum data rate. Although both theory and previous experiments have shown that f(BW) in STNOs is governed by the amplitude relaxation frequency f(p), we here demonstrate, using single-shot time-resolved measurements of a magnetic tunnel junction based STNO, that it can be many times larger under strong modulation. The behavior is qualitatively reproduced in macrospin simulations. Our results show that f(BW) of STNOs is not as limiting a factor for future wireless applications as previously believed.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE) , 2021. Vol. 42, nr 12, s. 1886-1889
Emneord [en]
Spin torque nano-oscillators, modulation bandwidth, nonlinear frequency and amplitude modulation
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-306482DOI: 10.1109/LED.2021.3122241ISI: 000722001400052Scopus ID: 2-s2.0-85118594561OAI: oai:DiVA.org:kth-306482DiVA, id: diva2:1637555
Merknad

QC 20220214

Tilgjengelig fra: 2022-02-14 Laget: 2022-02-14 Sist oppdatert: 2022-06-25bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Person

Åkerman, Johan

Søk i DiVA

Av forfatter/redaktør
Åkerman, Johan
Av organisasjonen
I samme tidsskrift
IEEE Electron Device Letters

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 59 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf