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Engineering MoOx/MXene Hole Transfer Layers for Unexpected Boosting of Photoelectrochemical Water Oxidation
Vise andre og tillknytning
2022 (engelsk)Inngår i: Angewandte Chemie International Edition, ISSN 1433-7851, E-ISSN 1521-3773, Vol. 61, nr 16, artikkel-id e202200946Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The development of semiconductor photoanodes is of great practical interest for the realization of photoelectrochemical (PEC) water splitting. Herein, MXene quantum dots (MQD) were grafted on a BiVO4 substrate, then a MoOx layer by combining an ultrathin oxyhydroxide oxygen evolution cocatalyst (OEC) was constructed as an integrated photoanode. The OEC/MoOx/MQD/BiVO4 array not only achieves a current density of 5.85 mA cm−2 at 1.23 V versus a reversible hydrogen electrode (vs. RHE), but also enhances photostability. From electrochemical analysis and density functional theory calculations, high PEC performance is ascribed to the incorporation of MoOx/MQD as hole transfer layers, retarding charge recombination, promoting hole transfer and accelerating water splitting kinetics. This proof-of-principle work not only demonstrates the potential utilization of hole transfer layers, but also sheds light on rational design and fabrication of integrated photoanodes for feasible solar energy conversion. 

sted, utgiver, år, opplag, sider
Wiley , 2022. Vol. 61, nr 16, artikkel-id e202200946
Emneord [en]
Hole Transfer Layer, Integrated Photoanode, MXene Quantum Dots, Photoelectrochemical Water Splitting, Reaction Kinetics, Bismuth compounds, Density functional theory, Energy conversion, Molybdenum oxide, Nanocrystals, Photoelectrochemical cells, Quantum chemistry, Solar energy, Co catalysts, Hole transfer, Mxene quantum dot, Oxygen evolution, Photo-anodes, Photoelectrochemical water oxidation, Transfer layers, Semiconductor quantum dots
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Identifikatorer
URN: urn:nbn:se:kth:diva-320816DOI: 10.1002/anie.202200946ISI: 000758278900001PubMedID: 35142021Scopus ID: 2-s2.0-85124872618OAI: oai:DiVA.org:kth-320816DiVA, id: diva2:1708895
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QC 20221107

Tilgjengelig fra: 2022-11-07 Laget: 2022-11-07 Sist oppdatert: 2022-11-07bibliografisk kontrollert

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