Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Electron temperatures in high power impulse magnetron sputtering: the role of the target material's sputter yield
Leibniz Instittute of Surface Engineering (IOM), Modelling and Simulation, Leipzig, Germany.
University of Iceland, Science Institute, Reykjavík, Iceland.
Linköping University, Plasma and Coatings Physics Division, IFM-Materials Physics, Linköping, Sweden.
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektroteknik, Rymd- och plasmafysik. University of Iceland, Science Institute, Reykjavík, Iceland.ORCID-id: 0000-0002-8153-3209
2025 (engelsk)Inngår i: 25th IEEE Pulsed Power Conference, PPC 2025 and the 52nd IEEE International Conference on Plasma Science, ICOPS 2025, Institute of Electrical and Electronics Engineers (IEEE) , 2025Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Magnetron sputtering is a widely used process for thin-film deposition, employed in laboratory research and industry. It is based on a low-pressure plasma discharge in which ions of a working gas, typically argon, are created and accelerated toward a target containing the source material. Sputtering from the target releases target atoms into the gas phase that can condense on a substrate to form a thin film. High-power impulse magnetron sputtering (HiPIMS) achieves high discharge current densities by pulsing the discharge at a low duty cycle. This process generates a dense plasma region through which sputtered atoms pass with a high probability of becoming ionized. The resulting highly ionized flux of film-forming species enables for example the deposition of dense, crystalline and well-adhering thin films.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE) , 2025.
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-377825DOI: 10.1109/PPPS56198.2025.11248399Scopus ID: 2-s2.0-105029896179OAI: oai:DiVA.org:kth-377825DiVA, id: diva2:2043742
Konferanse
25th IEEE Pulsed Power Conference, PPC 2025 and the 52nd IEEE International Conference on Plasma Science, ICOPS 2025, Berlin, Germany, Jun 15 2025 - Jun 20 2025
Merknad

Part of ISBN 979-8-3315-4376-1

QC 20260306

Tilgjengelig fra: 2026-03-06 Laget: 2026-03-06 Sist oppdatert: 2026-03-06bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Person

Gudmundsson, Jon Tomas

Søk i DiVA

Av forfatter/redaktør
Gudmundsson, Jon Tomas
Av organisasjonen

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 32 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf