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Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Optik.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Optik.ORCID-id: 0000-0002-4606-4865
Vise andre og tillknytning
2009 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, nr 18Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Emission from a 285 nm AlGaN quantum well light emitting diode has been studied by scanning near-field optical spectroscopy. The scans revealed micrometer-size domainlike areas emitting with a higher intensity and at a longer wavelength; presumably, because of a lower AlN molar fraction in these regions. Experiments performed on different days have shown that with time, intensity from these spots increases and emission wavelength shifts to the red, indicating a further change in the quantum well alloy composition. This has allowed distinguishing an aging mechanism that involves locally increased current, heating, and atom migration.

sted, utgiver, år, opplag, sider
2009. Vol. 95, nr 18
Emneord [en]
ageing, aluminium compounds, gallium compounds, III-V semiconductors, light emitting diodes, semiconductor quantum wells, wide band gap, semiconductors, chemical-vapor-deposition, uv leds, gan, aln, nm
Identifikatorer
URN: urn:nbn:se:kth:diva-18947DOI: 10.1063/1.3262964ISI: 000271666800033Scopus ID: 2-s2.0-71049166859OAI: oai:DiVA.org:kth-18947DiVA, id: diva2:336994
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2022-06-25bibliografisk kontrollert
Inngår i avhandling
1. Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
Åpne denne publikasjonen i ny fane eller vindu >>Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
2011 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2011. s. 98
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2011:12
Emneord
AIGaN, deep-UV LEDs, polarization fields, screening, exciton binding energy, alloy fluctuations, near-field microscopy, carrier dynamics, LED aging
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-37917 (URN)978-91-7501-065-6 (ISBN)
Disputas
2011-09-20, Sal / Hall C1, Electrum,, Isafjordsgatan 26, Kista, 13:00 (engelsk)
Opponent
Veileder
Merknad
QC 20110831Tilgjengelig fra: 2011-08-31 Laget: 2011-08-19 Sist oppdatert: 2022-06-24bibliografisk kontrollert

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Marcinkevicius, Saulius

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