Investigation of pressure dependent thermal contact resistance between silver metallized SiC chip and DBC substrateVise andre og tillknytning
2015 (engelsk)Inngår i: European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Trans Tech Publications Inc., 2015, Vol. 821-823, s. 452-455Konferansepaper, Publicerat paper (Fagfellevurdert)
Resurstyp
Text
Abstract [en]
Thermal contact resistances between a silver metallized SiC chip and a direct bonded copper (DBC) substrate have been measured in a heat transfer experiment. A novel experimental method to separate thermal contact resistances in multilayer heat transfer path has been demonstrated. The experimental results have been compared both with analytical calculations and with 3D computational fluid dynamics (CFD) simulation results. A simplified CFD model of the experimental setup has been validated. The results show significant pressure dependence of the thermal contact resistance but also a pressure independent part.
sted, utgiver, år, opplag, sider
Trans Tech Publications Inc., 2015. Vol. 821-823, s. 452-455
Serie
Materials Science Forum, ISSN 0255-5476 ; 821-823
Emneord [en]
DBC substrate, Heat transfer, Pressure dependence, SiC, Thermal contact resistance, Computational fluid dynamics, Contact resistance, Metallizing, Silicon carbide, Silver, Thermal conductivity of solids, Analytical calculation, Computational fluid dynamics simulations, Direct bonded coppers, Experimental methods, Pressure dependent, Heat resistance
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-181590DOI: 10.4028/www.scientific.net/MSF.821-823.452Scopus ID: 2-s2.0-84950349739ISBN: 9783038354789 (tryckt)OAI: oai:DiVA.org:kth-181590DiVA, id: diva2:911370
Konferanse
European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 21 September 2014 through 25 September 2014
Merknad
QC 20160311
2016-03-112016-02-022025-02-09bibliografisk kontrollert