Investigation of pressure dependent thermal contact resistance between silver metallized SiC chip and DBC substrate Visa övriga samt affilieringar
2015 (Engelska) Ingår i: European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Trans Tech Publications Inc., 2015, Vol. 821-823, s. 452-455Konferensbidrag, Publicerat paper (Refereegranskat)
Resurstyp Text
Abstract [en]
Thermal contact resistances between a silver metallized SiC chip and a direct bonded copper (DBC) substrate have been measured in a heat transfer experiment. A novel experimental method to separate thermal contact resistances in multilayer heat transfer path has been demonstrated. The experimental results have been compared both with analytical calculations and with 3D computational fluid dynamics (CFD) simulation results. A simplified CFD model of the experimental setup has been validated. The results show significant pressure dependence of the thermal contact resistance but also a pressure independent part.
Ort, förlag, år, upplaga, sidor Trans Tech Publications Inc., 2015. Vol. 821-823, s. 452-455
Serie
Materials Science Forum, ISSN 0255-5476 ; 821-823
Nyckelord [en]
DBC substrate, Heat transfer, Pressure dependence, SiC, Thermal contact resistance, Computational fluid dynamics, Contact resistance, Metallizing, Silicon carbide, Silver, Thermal conductivity of solids, Analytical calculation, Computational fluid dynamics simulations, Direct bonded coppers, Experimental methods, Pressure dependent, Heat resistance
Nationell ämneskategori
Strömningsmekanik
Identifikatorer URN: urn:nbn:se:kth:diva-181590 DOI: 10.4028/www.scientific.net/MSF.821-823.452 Scopus ID: 2-s2.0-84950349739 ISBN: 9783038354789 (tryckt) OAI: oai:DiVA.org:kth-181590 DiVA, id: diva2:911370
Konferens European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 21 September 2014 through 25 September 2014
Anmärkning QC 20160311
2016-03-112016-02-022025-02-09 Bibliografiskt granskad