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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 13, article id 132404Article in journal (Refereed) Published
Abstract [en]
We demonstrate low-operational-current W/Co20Fe60B20/MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the beta-phase W (theta(SH) = -0.53), a very low threshold current density of 3.3 x 10(7) A/cm(2) can be achieved. Together with their very wide frequency tunability (7-28GHz), promoted by a moderate perpendicular magnetic anisotropy, HiR-Si/W/CoFeB based SHNOs are potential candidates for wide-band microwave signal generation. Their CMOS compatibility offers a promising route towards the integration of spintronic microwave devices with other on-chip semiconductor microwave components.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-226793 (URN)10.1063/1.5022049 (DOI)000429072800015 ()2-s2.0-85044750620 (Scopus ID)
Funder
Swedish Foundation for Strategic Research Swedish Research CouncilKnut and Alice Wallenberg FoundationEU, FP7, Seventh Framework Programme, 307144
Note
QC 20180504
2018-05-042018-05-042023-12-07Bibliographically approved