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Reverse‐Bias Electroluminescence in Er‐Doped β‐Ga 2 O 3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.ORCID iD: 0000-0001-8774-9302
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems, Integrated devices and circuits.ORCID iD: 0000-0002-9040-4740
KTH, School of Electrical Engineering and Computer Science (EECS), Centres, Electrum Laboratory, ELAB.ORCID iD: 0000-0002-4148-5679
Institute of Solid State Physics ISSP, Thin Films Laboratory Kengaraga Street 8 LV-1063 Riga Latvia.
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2021 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 219, no 4, p. 2100610-2100610Article in journal (Refereed) Published
Place, publisher, year, edition, pages
Wiley , 2021. Vol. 219, no 4, p. 2100610-2100610
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-312751DOI: 10.1002/pssa.202100610ISI: 000736523700001Scopus ID: 2-s2.0-85122124368OAI: oai:DiVA.org:kth-312751DiVA, id: diva2:1659880
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QC 20220621

Available from: 2022-05-23 Created: 2022-05-23 Last updated: 2022-06-25Bibliographically approved

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Khartsev, SergeyHammar, MattiasNordell, NilsHallén, Anders

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Khartsev, SergeyHammar, MattiasNordell, NilsHallén, Anders
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Electronics and Embedded systemsIntegrated devices and circuitsElectrum Laboratory, ELAB
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Condensed Matter Physics

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