High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser DepositionShow others and affiliations
2020 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 258, no 2, p. 2000362-2000362Article in journal (Refereed) Published
Abstract [en]
Pulsed laser ablation is used to form high-quality silicon-doped β-Ga2O3 films on sapphire by alternatively depositing Ga2O3 and Si from two separate sources. X-ray analysis reveals a single crystallinity with a full width at half maximum for the rocking curve around the (−201) reflection peak of 1.6°. Silicon doping concentration is determined by elastic recoil detection analysis (ERDA), and the best electrical performance is reached at a Si concentration of about 1 × 1020 cm−3, using optimized deposition parameters. It is found that a high crystalline quality and a mobility of about 2.9 cm2 (V s)−1 can be achieved by depositing Si and Ga2O3 from two separate sources. Two types of Schottky contacts are fabricated: one with a pure Pt and one with a PtOx composition. Electrical results from these structures are also presented.
Place, publisher, year, edition, pages
Wiley , 2020. Vol. 258, no 2, p. 2000362-2000362
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-312752DOI: 10.1002/pssb.202000362ISI: 000572073100001Scopus ID: 2-s2.0-85091360303OAI: oai:DiVA.org:kth-312752DiVA, id: diva2:1659881
Note
QC 20220621
2022-05-232022-05-232022-06-25Bibliographically approved