Body-diode voltage drop has been identified as a reliable parameter for both as a temperature-sensitive electrical parameter (TSEP) to estimate the SiC MOSFET junction temperature and as a failure precursor to identify any package related degradation. However, in the inverse-mode power-cycling test (PCT), it is found that the body-diode voltage drop changes at a fixed temperature. It is known from the previous research that the increase in a body-diode voltage drop at heating current acts as a failure precursor, indicating package related degradation. However, the change in the voltage drop at a low measurement current, due to degradation, is not well investigated. This study aims to analyse how the body-diode voltage drop at low current changes in TO-247 packaged SiC MOSFETs during inverse and forward-mode PCT.