A graphene/h-BN MEMS varactor for sub-THz and THz applications Show others and affiliations
2023 (English) In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 15, no 30, p. 12530-12539Article in journal (Refereed) Published
Abstract [en]
Recent development of terahertz systems has created the need for new elements operating in this frequency band, i.e., fast tunable devices such as varactors. Here, we present the process flow and characterization of a novel electronic variable capacitor device that is made with the use of 2D metamaterials such as graphene (GR) or hexagonal boron nitride (h-BN). Comb-like structures are etched into a silicon/silicon nitride substrate and a metal electrode is deposited at the bottom. Next, a PMMA/GR/h-BN layer is placed on top of the sample. As voltage is applied between GR and metal, the PMMA/GR/h-BN layer bends towards the bottom electrode thus decreasing the distance between electrodes and changing the capacitance. The high tunability and complementary metal oxide semiconductor (CMOS)-compatible process flow of the platform for our device and its millimeter size make it promising for applications in future electronics and terahertz technologies. The goal of our research is to integrate our device with dielectric rod waveguides, thus making THz phase shifters.
Place, publisher, year, edition, pages Royal Society of Chemistry (RSC) , 2023. Vol. 15, no 30, p. 12530-12539
National Category
Condensed Matter Physics
Identifiers URN: urn:nbn:se:kth:diva-334383 DOI: 10.1039/d2nr06863j ISI: 001019032900001 PubMedID: 37387628 Scopus ID: 2-s2.0-85164362945 OAI: oai:DiVA.org:kth-334383 DiVA, id: diva2:1789299
Funder EU, Horizon 2020, 862788
Note Correction in: Nanoscale, vol. 15, issue 31, pages 13133. DOI:10.1039/D3NR90137H, Scopus:2-s2.0-85167842690
QC 20230818
2023-08-182023-08-182023-08-31 Bibliographically approved