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A theoretical investigation on the structure stability, electronic structures, optical properties, and transport properties of Zintl compounds CsZn4P3 and CsZn4As3
Guangxi Novel Battery Materials Research Center of Engineering Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China.
Guangxi Novel Battery Materials Research Center of Engineering Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China.
Guangxi Novel Battery Materials Research Center of Engineering Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China.
Guangxi Key Laboratory of Electrochemical Energy Materials, School of Chemistry and Chemical Engineering, Guangxi University, Nanning, 530004, China.
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2024 (English)In: Journal of Solid State Chemistry, ISSN 0022-4596, E-ISSN 1095-726X, Vol. 339, article id 124976Article in journal (Refereed) Published
Abstract [en]

The present study investigates the structure stability, electronic structures, and optical properties of Zintl compounds CsZn4P3 and CsZn4As3 by first-principles calculations. An assessment of the phonon dispersion curves and elastic constants indicate both dynamic and mechanical stability for the both compounds. By employing the HSE06 hybrid functional, both compounds display direct bandgap with widths of 0.93 eV for CsZn4P3 and 0.66 eV for CsZn4As3. Furthermore, an analysis of the dielectric constant, refractive index, extinction coefficient, and energy loss as functions of photon energy is conducted to study the optical properties. Based on the semi-classical Boltzmann transport theory and the Slack's equation, a large Seebeck coefficient and minimum lattice thermal conductivity are obtained for CsZn4As3, which result in a figure of merit value of 0.79 at 700 K. These findings underscore the potential of CsZn4As3 as a promising candidate for future research and development in the realm of thermoelectric materials.

Place, publisher, year, edition, pages
Elsevier BV , 2024. Vol. 339, article id 124976
Keywords [en]
Electronic properties, First-principles calculations, Optical properties, Transport properties, Zintl compounds
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-353473DOI: 10.1016/j.jssc.2024.124976ISI: 001316945100001Scopus ID: 2-s2.0-85202551458OAI: oai:DiVA.org:kth-353473DiVA, id: diva2:1899148
Note

QC 20241009

Available from: 2024-09-19 Created: 2024-09-19 Last updated: 2024-10-09Bibliographically approved

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Persson, Clas

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