Depth-Resolved X-Ray Photoelectron Spectroscopy Evidence of Intrinsic Polar States in HfO2-Based FerroelectricsShow others and affiliations
2024 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 36, no 45, article id 2408572Article in journal (Refereed) Published
Abstract [en]
The discovery of ferroelectricity in nanoscale hafnia-based oxide films has spurred interest in understanding their emergent properties. Investigation focuses on the size-dependent polarization behavior, which is sensitive to content and movement of oxygen vacancies. Though polarization switching and electrochemical reactions is shown to co-occur, their relationship remains unclear. This study employs X-ray photoelectron spectroscopy with depth sensitivity to examine changes in electrochemical states occurring during polarization switching. Contrasting Hf0.5Zr0.5O2 (HZO) with Hf0.88La0.04Ta0.08O2 (HLTO), a composition with an equivalent structure and comparable average ionic radius, electrochemical states are directly observed for specific polarization directions. Lower-polarization films exhibit more significant electrochemical changes upon switching, suggesting an indirect relationship between polarization and electrochemical state. This research illuminates the complex interplay between polarization and electrochemical dynamics, providing evidence for intrinsic polar states in HfO2-based ferroelectrics.
Place, publisher, year, edition, pages
Wiley , 2024. Vol. 36, no 45, article id 2408572
Keywords [en]
electrochemistry, ferroelectricity, hafnia, x-ray photoelectron spectroscopy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-366505DOI: 10.1002/adma.202408572ISI: 001310480600001PubMedID: 39263830Scopus ID: 2-s2.0-85203688242OAI: oai:DiVA.org:kth-366505DiVA, id: diva2:1982629
Note
QC 20250708
2025-07-082025-07-082025-07-08Bibliographically approved