Heterogeneous transfer bonding for wafer-level MEMS integrationShow others and affiliations
2026 (English)In: 2026 9th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2026, Institute of Electrical and Electronics Engineers (IEEE) , 2026, p. 14O11-Conference paper, Published paper (Refereed)
Abstract [en]
We developed a transfer bonding method for large-scale integration of MEMS devices directly on standard CMOS foundry wafers, enabling novel applications of sophisticated, programmable MEMS circuits. Further, we developed a hermetic sealing process, also based on wafer-level transfer bonding, to protect the MEMS devices.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2026. p. 14O11-
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-385393DOI: 10.1109/LTB-3D69101.2026.11555294Scopus ID: 2-s2.0-105043460050OAI: oai:DiVA.org:kth-385393DiVA, id: diva2:2086289
Conference
9th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2026, Kanazawa, Japan, May 13 2026 - May 15 2026
Note
Part of ISBN 9798331584351
QC 20260713
2026-07-132026-07-132026-07-13Bibliographically approved