Benefits of implementing a duty-ratio controlled parallel-resonant converter with SiC MOSFETs instead of Si IGBTsShow others and affiliations
2021 (English)In: 2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe, Institute of Electrical and Electronics Engineers Inc. , 2021Conference paper, Published paper (Refereed)
Abstract [en]
In this paper, the operation of a parallel resonant converter with a capacitive output filter that exploits the parasitic components of its transformer is described briefly. Measurements from a high power DC pulsed generator with Si IGBTs are obtained. Finally, the experimentally calculated losses of the Si IGBTs are compared with SiC MOSFETs' losses using simulations of the system.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2021.
Keywords [en]
high voltage power supplies, High-voltage conversion, resonant converters, silicon carbide (SiC), HVDC power transmission, Insulated gate bipolar transistors (IGBT), Power converters, Capacitive output filter, Duty ratios, High voltage power supply, High-voltages, Parallel resonant, Silicon carbide, Silicon carbide MOSFETs, Voltage conversion
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-313192ISI: 000832143901109Scopus ID: 2-s2.0-85119072767OAI: oai:DiVA.org:kth-313192DiVA, id: diva2:1662625
Conference
23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe, 6 September - 10 September 2021, Ghent, Belgium
Note
Part of proceedings ISBN 9789075815375
QC 20230921
2022-06-012022-06-012023-09-21Bibliographically approved