We present a comparative molecular dynamics simulation study of copper film growth between various physical vapor deposition (PVD) techniques: a constant energy neutral beam, thermal evaporation, dc magnetron sputtering, high-power impulse magnetron sputtering (HiPIMS), and bipolar HiPIMS. Experimentally determined energy distribution functions were utilized to model the deposition processes. Our results indicate significant differences in the film quality, growth rate, and substrate erosion. Bipolar HiPIMS shows the potential for an improved film structure under certain conditions, albeit with increased substrate erosion. Bipolar HiPIMS (+180 V and 10% Cu+ ions) exhibited the best film properties in terms of crystallinity and atomic stress among the PVD processes investigated.