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Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap
Department of Physics, Chemistry and Biology, Linköping University.ORCID iD: 0000-0002-9050-5445
1996 (English)In: Phys. Rev. B, Vol. 54, p. 10257-10260Article in journal (Refereed) Published
Place, publisher, year, edition, pages
American Physical Society , 1996. Vol. 54, p. 10257-10260
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-357104DOI: 10.1103/PhysRevB.54.10257ISI: A1996VT67400004Scopus ID: 2-s2.0-0001089894OAI: oai:DiVA.org:kth-357104DiVA, id: diva2:1918002
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QC 20241206

Available from: 2024-12-04 Created: 2024-12-04 Last updated: 2024-12-06Bibliographically approved

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Publisher's full textScopushttps://link.aps.org/doi/10.1103/PhysRevB.54.10257

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Persson, Clas

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