Channelling can have a profound effect on both the defect formation and the distribution of implanted atoms in crystalline materials. This holds particularly for SiC, where channelling effects are well known for conventional dopant impurities. In contrast, channelling effects for protons in SiC are much less studied, despite H is known to be a promising element for defect engineering in power device applications as well as quantum technologies. In this study, the effects of ion channelling on the depth distribution of medium energy proton implants in epitaxial 4H-SiC were investigated. N-type 4H-SiC epilayers, grown on the (0001) plane, were implanted with 350 keV protons to low (5e9 cm−2) and medium (6e14 cm−2) doses, with beam alignment ranging from 0° to 7° off the [0001] orientation towards the [112‾0] direction. The samples were measured by a combination of deep level transient spectroscopy (DLTS) and dynamic secondary ion mass spectrometry (D-SIMS), to reveal the role of ion channelling on the generation of defects and the distribution of implanted H. The experimental profiles were also compared to Monte Carlo binary collision approximation (MC-BCA) simulations. These measurements show that channelling implantation of protons in high quality epitaxial 4H-SiC can be used for discrete profile shape adjustments and peak depth control by playing with the beam alignment conditions, thus representing a valuable means for high precision localized in-depth control of electrically active defects.