Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter 2015 (English)In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, IEEE , 2015, p. 1-9Conference paper, Published paper (Refereed)

Resource type

Text

Abstract [en]

SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes.

Place, publisher, year, edition, pages

IEEE , 2015. p. 1-9

Keywords [en]

Schottky diodes;bridge circuits;elemental semiconductors;invertors;power MOSFET;power bipolar transistors;resonant power convertors;efficiency improvement;full-bridge inverter losses;series-loaded resonant converter;silicon carbide BJT;silicon carbide MOSFET;silicon carbide Schottky diodes;Frequency modulation;Loss measurement;MOSFET;Resonant frequency;Silicon carbide;Snubbers;Zero voltage switching;Converter control;High frequency power converter;Resonant converter;Silicon Carbide (SiC);Soft switching

National Category

Other Electrical Engineering, Electronic Engineering, Information Engineering

Research subject

SRA - Energy

Identifiers

URN: urn:nbn:se:kth:diva-182755DOI: 10.1109/EPE.2015.7309472ISI: 000377101803093Scopus ID: 2-s2.0-84965046356OAI: oai:DiVA.org:kth-182755DiVA, id: diva2:905693

Conference

Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on

Funder

StandUp

Note

QC 20160317

Available from: 2016-02-23 Created: 2016-02-23 Last updated: 2022-06-23Bibliographically approved

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Tolstoy, GeorgColmenares, JuanNee, Hans-Peter

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