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  • 1.
    Khartsev, Sergey
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Hammar, Mattias
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems, Integrated devices and circuits.
    Nordell, Nils
    KTH, School of Electrical Engineering and Computer Science (EECS), Centres, Electrum Laboratory, ELAB.
    Zolotarjovs, Aleksejs
    Institute of Solid State Physics ISSP, Thin Films Laboratory Kengaraga Street 8 LV-1063 Riga Latvia.
    Purans, Juris
    Institute of Solid State Physics ISSP, Thin Films Laboratory Kengaraga Street 8 LV-1063 Riga Latvia.
    Hallén, Anders
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems, Integrated devices and circuits.
    Reverse‐Bias Electroluminescence in Er‐Doped β‐Ga 2 O 3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition2021In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 219, no 4, p. 2100610-2100610Article in journal (Refereed)
  • 2.
    Khartsev, Sergey
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Nordell, Nils
    KTH, School of Electrical Engineering and Computer Science (EECS), Centres, Electrum Laboratory, ELAB.
    Hammar, Mattias
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems, Integrated devices and circuits.
    Purans, Juris
    Institute of Solid State Physics ISSP Kengaraga Street 8 Riga LV-1063 Latvia.
    Hallén, Anders
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems, Integrated devices and circuits.
    High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition2020In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 258, no 2, p. 2000362-2000362Article in journal (Refereed)
    Abstract [en]

    Pulsed laser ablation is used to form high-quality silicon-doped β-Ga2O3 films on sapphire by alternatively depositing Ga2O3 and Si from two separate sources. X-ray analysis reveals a single crystallinity with a full width at half maximum for the rocking curve around the (−201) reflection peak of 1.6°. Silicon doping concentration is determined by elastic recoil detection analysis (ERDA), and the best electrical performance is reached at a Si concentration of about 1 × 1020 cm−3, using optimized deposition parameters. It is found that a high crystalline quality and a mobility of about 2.9 cm2 (V s)−1 can be achieved by depositing Si and Ga2O3 from two separate sources. Two types of Schottky contacts are fabricated: one with a pure Pt and one with a PtOx composition. Electrical results from these structures are also presented. 

  • 3.
    Su, Yingchun
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Xue, Han
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Fu, Yujie
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Chen, Shiqian
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Li, Zheng
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Li, Lengwan
    KTH, School of Engineering Sciences in Chemistry, Biotechnology and Health (CBH), Fibre- and Polymer Technology, Biocomposites. KTH, School of Engineering Sciences in Chemistry, Biotechnology and Health (CBH), Centres, Wallenberg Wood Science Center.
    Knoks, Ainars
    Institute of Solid State Physics University of Latvia Riga LV‐1063 Latvia.
    Bogdanova, Olga
    Institute of Solid State Physics University of Latvia Riga LV‐1063 Latvia.
    Lesničenoks, Pēteris
    Institute of Solid State Physics University of Latvia Riga LV‐1063 Latvia.
    Palmbahs, Roberts
    Institute of Solid State Physics University of Latvia Riga LV‐1063 Latvia.
    Laurila, Mika‐Matti
    Faculty of Information Technology and Communication Sciences Tampere University Tampere 33720 Finland.
    Mäntysalo, Matti
    Faculty of Information Technology and Communication Sciences Tampere University Tampere 33720 Finland.
    Hammar, Mattias
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Hallén, Anders
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Nordell, Nils
    KTH, School of Electrical Engineering and Computer Science (EECS), Centres, Electrum Laboratory, ELAB.
    Li, Jiantong
    KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
    Monolithic Fabrication of Metal‐Free On‐Paper Self‐Charging Power Systems2024In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028Article in journal (Refereed)
    Abstract [en]

    Self-charging power systems (SCPSs) are envisioned as promising solutions for emerging electronics to mitigate the increasing global concern about battery waste. However, present SCPSs suffer from large form factors, unscalable fabrication, and material complexity. Herein, a type of highly stable, eco-friendly conductive inks based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are developed for direct ink writing of multiple components in the SCPSs, including electrodes for miniaturized spacer-free triboelectric nanogenerators (TENGs) and microsupercapacitors (MSCs), and interconnects. The principle of “one ink, multiple functions” enables to almost fully print the entire SCPSs on the same paper substrate in a monolithic manner without post-integration. The monolithic fabrication significantly improves the upscaling capability for manufacturing and reduces the form factor of the entire SCPSs (a small footprint area of ≈2 cm × 3 cm and thickness of ≈1 mm). After pressing/releasing the TENGs for ≈79000 cycles, the 3-cell series-connected MSC array can be charged to 1.6 V while the 6-cell array to 3.0 V. On-paper SCPSs are promising to serve as lightweight, thin, sustainable, and low-cost power supplies. 

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